Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

Jian Wen Lian; Xiao Ling Lin; Ruo He Yao

doi:10.4028/www.scientific.net/AMR.904.277

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 904Application of PEM and OBIRCH to Defect...

Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

Abstract:

With the increasing integration and complexity of microelectronic devices, fault isolation has been challenged. Photon Emission Microscopy (PEM) and Optical Beam Induced Resistance Change (OBIRCH) are effective tools for defect localization and fault characterization in failure analysis. In this paper, the principles and different application condition of PEM and OBIRCH are discussed. PEM is very helpful for locating defects emitting photon, but can not detect the defects which have no photon emitting, such as shorted metal interconnects; OBIRCH as a complementary, has a high success rate for locating resistance defects. Two cases with failure mechanisms illuminated are presented to show the different application of PEM and OBIRCH.

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Periodical:

Advanced Materials Research (Volume 904)

Pages:

277-281

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.904.277

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Online since:

March 2014

Authors:

Jian Wen Lian*, Xiao Ling Lin, Ruo He Yao

Keywords:

Defect Localization, EMMI, OBIRCH, PEM

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* - Corresponding Author

References

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