Early Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment

Win Der Lee; Mu Chun Wang

doi:10.4028/www.scientific.net/AMR.910.40

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 910Early Effect for 28nm HK/MG PMOSFETs after Post...

Early Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment

Abstract:

Exposing the Early effect (or called channel-length modulation effect) at deep subnano node high-k/metal gate (HK/MG) process is still beneficial to IC designers to reduce the obsession in design. This effect contributes the operating point in circuit concern and process adjustment. For the long channel device, the intercept under various gate voltages focuses on one point consistent with conventional device. However, the divergent phenomenon was observed at the short channel tested device due to the higher strain effect, causing the non-uniform electrical field distribution in channel.

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Periodical:

Advanced Materials Research (Volume 910)

Pages:

40-43

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.910.40

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Online since:

March 2014

Authors:

Win Der Lee, Mu Chun Wang*

Keywords:

Early Effect, Gate-Last, High-K Dielectric, Model, MOSFET, PDA

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* - Corresponding Author

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