PSPICE Simulation of IGCT and its Inverter Circuit

Article Preview

Abstract:

In order to observe the state of Integrated Gate Commutated Thyristor(IGCT) in inverter circuit and analyze the reason of its breakdown, a single 2T-3R subcircuit model of IGCT is used in Personal Simulation Program with IC Emphasis(PSPICE) environment to simulate an IGCT inverter unit of a 6kV/2MVA frequency converter. Simulation results show that when the stray inductance in inverter circuit is large, high forward blocking peak voltage will cause the breakdown of IGCT. This problem is solved by installing an absorption capacitor.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 915-916)

Pages:

1144-1148

Citation:

Online since:

April 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. Bernet. Rencent Developments of High Power Converters for Industry and Traction Application[C]. COBEP 1999, Foz do Iguacu, Brazil, September (1999).

Google Scholar

[2] X.Z. Jia. OrCAD/PSPICE9 Applied Curriculum. Xi'an: Xi'an University of Electronic Science and Technology Press, (2000).

Google Scholar

[3] J.Y. Chen. The Application of Computer Simulation in Power Electronics. Beijing: Tsinghua University Press, (2003).

Google Scholar

[4] J. Xiong. High Voltage Inverter in Thermal Power Plant. [D]. Nanchang: Nanchang University, (2010).

Google Scholar

[5] R. Yi, Z.M. Zhao. Research on the Turn-off Characteristic of IGCT Influenced by the Stray Inductance in High Power Inverters, 2007, 27(31): 115-120.

Google Scholar

[6] S.H. Li, C.X. Mao, J.M. Lu, G.D. Li. Transient Voltage Sharing of Series Connected IGCTs Paralleld with RC-snubbers, 2007, 33(9): 163-166.

Google Scholar