Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology

Moganraj Palianysamy; Zaliman Sauli; Uda Hashim; Vithyacharan Retnasamy; Steven Taniselass; Ramzan Mat Ayub

doi:10.4028/www.scientific.net/AMR.925.84

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 925Reactive Ion Etching Parameter Effect on Aluminum...

Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology

Abstract:

Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF₄), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and DOE offers a better way to optimize the desired outcome.

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Periodical:

Advanced Materials Research (Volume 925)

Pages:

84-87

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.925.84

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Online since:

April 2014

Authors:

Moganraj Palianysamy, Zaliman Sauli*, Uda Hashim, Vithyacharan Retnasamy, Steven Taniselass, Ramzan Mat Ayub

Keywords:

Design of Experiment (DOE), RIE

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