Failure Model Research of Power HBTs

Abstract:

Heterojunction bipolar transistors (HBTs) are playing an important role in microwave and power applications. When HBTs operated at high power, the power dissipation and self-heating effects will enable the generation of electrical properties in the transistor failure. The failure experiment system of microwave power HBTs was established. Based on this system, the changes of electrical parameters of HBTs in deferent stress, such as Gummel plots, base current various different base-emitter voltage and base-collector voltage, were measured and analyzed. At the same time, the failure of base current of SiGe HBTs under the condition of FC, SC and thermal stress are studied respectively. It was found that ΔI_B is the sensitive parameter of electrical and thermal stress. Based on this reason, we presented the failure model of I_B. This model could explain the experiment phenomenon successfully, which is very important and useful for applications of microwave power analog IC’s.

• Periodical: Advanced Materials Research (Volumes 926-930)
• Pages: 1348-1351
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.926-930.1348
• Online since: May 2014
• Authors: Jing Wei Yang*, Meng Meng Xu
• Keywords: Electrical Stress, Failure Model, Power HBT, Reliability, Thermal Stress

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