This paper researches on the surface change of the wafer in the fast polishing process. Firstly, the revised skin model is used to analyze the pressure distribution when the wafer stays beyond the polishing pad. Secondly, using the skin model and the Preston Equation MRR=k×p×v, the material removal rate is simulated and the surface change is predicted when the large optic plane wafer both has the rotational movement and the linear translation movement. Thirdly, the experiment is done to verify the simulation and prediction. The experiment result is similar to the simulation result. The paper shows a designed movement to predict the surface change.