Effects of Mg-Doping on Structure and Electric Properties of Mg_xZn_1-xO:Al Ceramics

Abstract:

MgxZn1-xO:Al ceramics with low resistivity using ZnO, MgO and Al2O3 nano-powders as raw materials were obtained by unpressurized sintering. The influence of Mg content on structure and electric properties of MgxZn1-xO:Al ceramics were studied. The results indicate that there is a single phase of wurtzite structure of ZnO in MgxZn1-xO:Al ceramics at x ≤ 0.3, and when the value of x was 0.3, phase separation was observed. The grains become smaller and more homogeneous with increasing Mg content to above 0.3. The resistivity of MgxZn1-xO:Al ceramics obviously increases with increasing Mg concentration due to the decrease of the carrier concentration and the mobility deriving from the decrease of Al-doping efficiency. The electrical conduction of MgxZn1-xO:Al ceramics can be markedly improved by increasing the Al-doping level and the lowest resistivity of 8.3×10-4Ω•cm can be obtained when Mg/(Mg+Zn)=0.2 and Al/(Mg+Zn+Al)=0.03.

• Periodical: Advanced Materials Research (Volumes 97-101)
• Pages: 475-478
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.97-101.475
• Online since: March 2010
• Authors: Hua Wang, Zhu Huang, Ji Wen Xu, Ling Yang, Ming Fang Ren
• Keywords: Electric Property, Mg-Doping, Mg_xZn_1-xO:Al Ceramic, Structure

References

[1] C. L. Wei, Y. C. Chen, C. C. Cheng, K. S. Kao, D. L. Cheng and P. S. Cheng: Thin Solid Films, In Press, Accepted Manuscript, Available online 19 August (2009).

[2] W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma and T. Venkatesan: Appl. Phys. Lett. Vol. 78(2001), p.2787.

[3] H. Ohta, K. Nomura and H. Hiramatsu: Solid-state Electronics Vol. 47(2003), p.2261.

[4] V. Ratnakar, V. Thirumalai, Y. Wei and C. Supab, U.S. Patent 7, 132, 668. (2006).

[5] K. Koike, K. Hama, I. Nakashima, G. Y. Takada, K. I. Ogata, S. Sasa, M. Inoue and M. Yano: J. Cryst. Growth Vol. 278(2005), p.288.

[6] R. Thangavel, M. Rajagopalan and J. Kumar: Solid State Commun Vol. 137(2006), p.507.

[7] S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma and T. Venkatesan: Appl. Phys. Lett. Vol. 80(2002), p.1529.

[8] K. Matsubara, H. Tampo and H. Shibata: Appl. Phys. Lett. Vol. 85(2004), p.1374.

[9] D. J. Cohen, K. C. Ruthe and S. A. Barnett: J. Appl. Phys. Vol. 96(2004), p.459.

[10] X. Zhang, H. Ma, Q. Qang, J. Ma, F. Zong, H. Xiao, F. Ji and S. Hou: Physica B Vol. 364(2005), p.157.

[11] H. Wang, J. W. Xu, M. F. Ren and L. Yang: J. Mater. Sci.: Materials in Electronics Vol. 19(2008), p.1135.

[12] Y. J. Li, Y. W. Heo, Y. Kwon, K. Ip, S. J. Pearton and D. P. Norton: Appl. Phys. Lett. Vol. 87(2005), p.072101.

[13] D. J. Cohen, K. C. Ruthe and S. A. Barnett: J. Appl. Phys. Vol. 96(2004), 459.