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Preparation and Characterization of Ba0.6Sr0.4TiO3 Ceramics Doped with Al3+, Ga3+, and In3+

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Abstract:

Ba0.6Sr0.4TiO3 materials doped with boron family Al3+, Ga3+ and In3+ are prepared by a ceramic process. The specimens possess condense microstructures. A low dielectric loss is achieved in the sample doped with In3+. Dielectric constants increase with decrease of the radii of doped ions. The results are discussed with respect to the interaction between oxygen ions and ions at B-site in ABO3 perovskite, which is revealed by Fourier transform infrared spectrum.

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Periodical:

Advanced Materials Research (Volumes 97-101)

Pages:

748-751

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.97-101.748

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Online since:

March 2010

Authors:

Juan Juan Qian, Xiao Yan Wang, Xi Yun He, Ping Sun Qiu, Da Zhi Sun

Keywords:

Boron Family, BST, Ceramic, Dielectric Property, Infrared Spectrum

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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