Preparation and Characterization of Ba0.6Sr0.4TiO3 Ceramics Doped with Al3+, Ga3+, and In3+

Abstract:

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Ba0.6Sr0.4TiO3 materials doped with boron family Al3+, Ga3+ and In3+ are prepared by a ceramic process. The specimens possess condense microstructures. A low dielectric loss is achieved in the sample doped with In3+. Dielectric constants increase with decrease of the radii of doped ions. The results are discussed with respect to the interaction between oxygen ions and ions at B-site in ABO3 perovskite, which is revealed by Fourier transform infrared spectrum.

Info:

Periodical:

Advanced Materials Research (Volumes 97-101)

Edited by:

Zhengyi Jiang and Chunliang Zhang

Pages:

748-751

DOI:

10.4028/www.scientific.net/AMR.97-101.748

Citation:

J. J. Qian et al., "Preparation and Characterization of Ba0.6Sr0.4TiO3 Ceramics Doped with Al3+, Ga3+, and In3+", Advanced Materials Research, Vols. 97-101, pp. 748-751, 2010

Online since:

March 2010

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$35.00

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