Formation of Highly Transparent SiCN Films Prepared by HWCVD

Abstract:

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Highly transparent silicon carbon nitride (SiCN) films were prepared by hot wire chemical vapor deposition (HWCVD) at low temperature as low as 40oC. Hexamethyldisilazane (HMDS) and NH3 were used as the source materials for SiCN deposition. The SiCN film prepared by only HMDS was completely transparent in the wavelength of the visible region. Moreover, there was a little absorption in the ultraviolet region. However, SiCN prepared by using HMDS and NH3 showed almost transparent both visible and UV regions.

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Periodical:

Edited by:

Pietro VINCENZINI and Giuseppe D'ARRIGO

Pages:

223-226

DOI:

10.4028/www.scientific.net/AST.54.223

Citation:

A. Izumi and T. Nakayamada, "Formation of Highly Transparent SiCN Films Prepared by HWCVD", Advances in Science and Technology, Vol. 54, pp. 223-226, 2008

Online since:

September 2008

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$35.00

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