Formation of Highly Transparent SiCN Films Prepared by HWCVD

Akira Izumi; T. Nakayamada

doi:10.4028/www.scientific.net/AST.54.223

Paper Titles

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Thermoelectric Properties of High Density Sintered Ca₃Co₂O₆
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Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices
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Formation of Highly Transparent SiCN Films Prepared by HWCVD
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Smart Properties of an Irradiated High-T_cSuperconductor
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Synthesis of Carbon Nanofibers as Support Layer for Metal Catalyst in a Microreactor for Three-Phase Reactions
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Multifunctional Wear and Corrosion Resistant Decorative Nanostructured Carbon-Base Coatings
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Miscibility, Isothermal Crystallization/Melting Behavior and Morphology of Poly(Trimethylene Terephthalate)/Poly(Buthylene Terephthalate) Blends
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 54Formation of Highly Transparent SiCN Films...

Formation of Highly Transparent SiCN Films Prepared by HWCVD

Abstract:

Highly transparent silicon carbon nitride (SiCN) films were prepared by hot wire chemical vapor deposition (HWCVD) at low temperature as low as 40oC. Hexamethyldisilazane (HMDS) and NH3 were used as the source materials for SiCN deposition. The SiCN film prepared by only HMDS was completely transparent in the wavelength of the visible region. Moreover, there was a little absorption in the ultraviolet region. However, SiCN prepared by using HMDS and NH3 showed almost transparent both visible and UV regions.