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Abstracts
C (diamond): Surface Reconstruction
a.292
SiC: Dislocations and Stacking Faults
a.293
SiC: Point Defects
a.294
SiC: Point Defects
a.295
SiC: Point Defects
a.296
SiC: Point Defects
a.297
TaC: Surface Reconstruction
a.298
GeS2-Ag2S-AgI: Ionic Conduction
a.299
Li2S: Li Diffusion
a.300

SiC: Point Defects

Page: A296

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