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Abstracts
Computer Simulation of Point Defects at Finite Temperatures
a.478
Double Screening Problem in Dechannelling by Point Defects
a.479
Point Defect Observations by Molecular Dynamics and Calculated Transmission Electron Microscopy Images
a.480
Hydrostatic Pressure Effect upon Point Defect Electronic States in Narrow-Gap and Gap-Less Semiconductors
a.481
Absolute Vacancy Concentrations in Noble Metals and Some of Their Alloys
a.482
Computational Studies of Hydrogen-Related Complexes in Semiconductors
a.483
Self-Interstitials as Basic Structural Units of Liquids and Glasses
a.484
From Color Centers to Coherent Phonon States
a.485
Defect-Excitation Processes Involved in Laser-Induced Atomic Emission and Laser Ablation of Non-Metallic Solids
a.486
HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 119-120Absolute Vacancy Concentrations in Noble Metals...

Absolute Vacancy Concentrations in Noble Metals and Some of Their Alloys

Page: A482

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