Average Gibbs Energy per Lattice Defect
a.487
a.487
Electron Channelling - A Method in Real-Space Crystallography and a Comparison with the Atomic Location by Channelling-Enhanced Microanalysis
a.488
a.488
Equilibrium Surface Segregation of Interstitials on Body-Centered Cubic (001) Surfaces - A Lattice-Gas Approach
a.489
a.489
Surface States as Probes of Buried Impurities
a.490
a.490
Positron Annihilation in II-VI Compound Semiconductors
a.491
a.491
Theory of Positrons in Solids and on Solid Surfaces
a.492
a.492
Studies of H in Semiconductors Using the Positive Muon as a Proton Analogue
a.493
a.493
Protons in Oxides
a.494
a.494
On the Doping-Induced Gap States of High Superconducting Transition Temperature Oxides due to Oxygen Disorder
a.495
a.495
Positron Annihilation in II-VI Compound Semiconductors
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