Studies of H in Semiconductors Using the Positive Muon as a Proton Analogue
a.493
a.493
Protons in Oxides
a.494
a.494
On the Doping-Induced Gap States of High Superconducting Transition Temperature Oxides due to Oxygen Disorder
a.495
a.495
Linear Defects, Dislocation Instability in Anisotropic Elastic Cubic Media
a.496
a.496
Influence of the Interatomic Potential on the Structure of Dislocations in a Monolayer
a.497
a.497
Three-Dimensional Stress-Field Expressions for Straight Dislocation Segments
a.498
a.498
Mechanism of Dislocation Climb in Binary and Mixed III-V Semiconductors
a.499
a.499
Dislocation Pole Model for Deformation Twinning in Face-Centered Cubic Lattices
a.500
a.500
On the Geometry of Dipolar Dislocation Structures Formed by Multi-Slip
a.501
a.501
Influence of the Interatomic Potential on the Structure of Dislocations in a Monolayer
Page: A497