Paper Titles

Materials: Metals and Alloys; Ag and Au Thin Films: Electrotransport - Cu: Surface Self-Diffusion
p.1

Cu: As, Ge and Zn Volume, Grain Boundary and Disclocation Pipe Diffusion - Cu-Ni: Ion Bambardment
p.39

Cu-Nb and Cu-Fe: Interdiffusion - Ni: Dislocations
p.53

Ni Films: Twins - Zr-Mo: Stacking Faults
p.99

Halides and other Ionic Substances
p.132

Semiconductors
p.196

Carbon and Carbides
p.258

Hybrides, Nitrides, Silicides, Sulfides, Miscellaneous Materials and Liquids
p.264

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 12Cu: As, Ge and Zn Volume, Grain Boundary and...

Cu: As, Ge and Zn Volume, Grain Boundary and Disclocation Pipe Diffusion - Cu-Ni: Ion Bambardment

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Diffusion and Defect Data Vol. 12

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Periodical:

Defect and Diffusion Forum (Volume 12)

Pages:

39-52

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.12.39

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Online since:

January 1976

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© 1976 Trans Tech Publications Ltd. All Rights Reserved

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