Influence of the DX Center on the Transport Properties of Si-Doped AlxGa1-xAs

Abstract:

Article Preview

Info:

Periodical:

Defect and Diffusion Forum (Volumes 123-124)

Pages:

77-122

DOI:

10.4028/www.scientific.net/DDF.123-124.77

Citation:

A. Parisini "Influence of the DX Center on the Transport Properties of Si-Doped AlxGa1-xAs", Defect and Diffusion Forum, Vols. 123-124, pp. 77-122, 1995

Online since:

March 1995

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.