C (Diamond): Point Defects
a.167
a.167
C (Graphite): Ion Bombardment and Surface Defects
a.168
a.168
C (Graphite): Ion Implantation and Point Defects
a.169
a.169
C (Graphite): D, H Diffusion and Ion Implantation
a.170
a.170
K3C60, Rb3C60: Point Defects
a.171
a.171
Ni2YB2C: Point Defects
a.172
a.172
SiC: Surface Reconstruction
a.173
a.173
TiC: Dislocations and Grain Boundaries
a.174
a.174
AlN/Al2O3, AlN/Si: Dislocations and Stacking Faults
a.175
a.175
K3C60, Rb3C60: Point Defects
Page: A171