Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon Using Recombination-Enhanced Defect Reaction

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Periodical:

Defect and Diffusion Forum (Volumes 136-137)

Edited by:

David J. Fisher

Pages:

41-60

DOI:

10.4028/www.scientific.net/DDF.136-137.41

Citation:

H. Nakashima et al., "Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon Using Recombination-Enhanced Defect Reaction", Defect and Diffusion Forum, Vols. 136-137, pp. 41-60, 1996

Online since:

March 1996

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$35.00

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