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Abstracts
Chemically Induced Interface Migration
a.583
Pressure Effect upon Grain Boundary Migration
a.584
Diffraction Measurements of Body Translation in Pseudo-Symmetrical Crystals
a.585
Defect Formation during Crystal Growth
a.586
Computer Simulation of ‡”= 3n Boundaries
a.587
A Branching Rule for Coincidence Boundaries in Cubic Polycrystals
a.588
Symmetrical Tilt Grain Boundary Structures in Face-Centered Cubic Metals with Low Stacking Fault Energies
a.589
Twins of Quasi-Crystals and of Rational Approximants
a.590
Simple Method for the Determination of the Restrictive Conditions on the Formation of Stacking Faults for the Relief of Pseudomorphic Strain in Face-Centered Cubic Epilayers
a.591
HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 138-139Computer Simulation of ‡”= 3n Boundaries

Computer Simulation of ‡”= 3n Boundaries

Page: A587

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