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Abstracts
C (Diamond): H Diffusion and Point Defects
a.204
SiC: Ion Bombardment and Point Defects
a.205
SiC: Stacking Faults
a.206
AlN: Antiphase Boundaries
a.207
GaN: Dislocations
a.208
GaN: Dislocations
a.209
GaN: Point Defects
a.210
GaN: Stacking Faults
a.211
GaN/GaP: Stacking Faults
a.212

GaN: Dislocations

Page: A208

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