Abstracts

GaN/Al₂O₃: Dislocations
a.203

GaN/Al₂O₃: Dislocations and Grain Boundaries
a.204

GaN/Si: Interdiffusion
a.205

GaN/Si: Point Defects
a.206

GaN/SiC: Ion Implantation and Point Defects
a.207

GaN/SiC: Dislocations
a.208

GaN/SiC: Dislocations, Grain Boundaries, and Stacking Faults
a.209

GaP: Neutron Irradiation and Point Defects
a.210

GaP: Surface Defects
a.211

HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors IIGaN/SiC: Ion Implantation and Point Defects

GaN/SiC: Ion Implantation and Point Defects

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