Si/SiO2: Interface Defects
a.558
a.558
SiC: B Diffusion, Ion Implantation and Point Defects
a.559
a.559
SiC: B Diffusion and Point Defects
a.560
a.560
SiC: Be Diffusion and Ion Implantation
a.561
a.561
SiC: H Diffusion and Planar Defects
a.562
a.562
SiC: Electron Irradiation and Point Defects
a.563
a.563
SiC: Electron Irradiation and Point Defects
a.564
a.564
SiC: Ion Bombardment and Point Defects
a.565
a.565
SiC: Ion Implantation and Dislocations
a.566
a.566
SiC: H Diffusion and Planar Defects
Page: A562