InGaN/GaN: Interdiffusion and Point Defects
a.258
a.258
InGaN/GaN: Dislocations
a.259
a.259
InGaN/GaN: Dislocations
a.260
a.260
InGaN/GaN: Stacking Faults
a.261
a.261
(Si,Al,O)6N8: Grain Boundaries
a.262
a.262
SiNx: H, N Diffusion
a.263
a.263
Si3N4: Neutron Irradiation and Dislocations
a.264
a.264
Si3N4: Neutron Irradiation and Dislocations
a.265
a.265
Si3N4: Neutron Irradiation, Point Defects and Defect Annealing
a.266
a.266
(Si,Al,O)6N8: Grain Boundaries
Page: A262