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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 216-217Point Defect Formation in Si and Si:Ge;...

Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects

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Diffusion, Segregation and Stresses in Materials

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Periodical:

Defect and Diffusion Forum (Volumes 216-217)

Pages:

29-34

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.216-217.29

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Online since:

February 2003

Authors:

Mariya G. Ganchenkova, Andrei V. Nazarov, Andrej Yu. Kuznetsov

Keywords:

Point Defect, Pressure, Silicon, Simulation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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