Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects

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Periodical:

Defect and Diffusion Forum (Volumes 216-217)

Edited by:

B.S. Bokstein and B.B. Straumal

Pages:

29-34

DOI:

10.4028/www.scientific.net/DDF.216-217.29

Citation:

M. G. Ganchenkova et al., "Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects", Defect and Diffusion Forum, Vols. 216-217, pp. 29-34, 2003

Online since:

February 2003

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$35.00

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