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Abstracts
Features of Vacancy Formation at Low Temperatures
a.880
Average Charge of the Oxygen Vacancy in Perovskites
a.881
Vacancy-Rich Ordered (A,)Nb2O6 Perovskites
a.882
First-Principles Calculations of Anion Vacancies in Oxides and Nitrides
a.883
Substitutional Carbon in Group-III Nitrides
a.884
Pressure-Induced Dislocation Amorphization of Crystals
a.885
Interaction of a Piezoelectric Screw Dislocation with an Insulating Crack
a.886
Energetics of Dislocation Cores in Semiconductors
a.887
Dislocation Stability in Crystallites of Nanocrystalline Materials
a.888
HomeDefect and Diffusion ForumDefects and Diffusion in Ceramics VSubstitutional Carbon in Group-III Nitrides

Substitutional Carbon in Group-III Nitrides

Page: A884

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