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Abstracts
Solvent Diffusion Kinetics in Dilute Random Alloy
a.643
Simulation of Interstitial Atoms in Two-Dimensional Nanocrystals
a.644
Hydrogen in the Vacancies of Semiconductors
a.645
Vacancies on Terraces and the Sublimation of Diamond-Like Crystals
a.646
Single-De fect and Cluster-Expansion Techniques for Ordered Compounds
a.647
Vibrational Spectroscopy of Defects in Ion-Implanted Materials
a.648
Characterization of Defects in Thin Oxides
a.649
Movement of Interstitial Clusters in Stress Gradients of Grain Boundaries
a.650
Void Growth in Rate Theory with Anisotropic Diffusion
a.651
HomeDefect and Diffusion ForumDefects and Diffusion in Ceramics VISingle-De fect and Cluster-Expansion Techniques...

Single-De fect and Cluster-Expansion Techniques for Ordered Compounds

Page: A647

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