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Abstracts
Characterization of Defects in Thin Oxides
a.649
Movement of Interstitial Clusters in Stress Gradients of Grain Boundaries
a.650
Void Growth in Rate Theory with Anisotropic Diffusion
a.651
Migration of Self-Interstitials and the Formation of Void Lattices
a.652
Observability of Atomic Defects by Atomic Force Microscopy
a.653
Evolution of Vacancy Densities in Powder Particles during Milling
a.654
Interference between Elastic-Phonon Scattering and Point Defects
a.655
Defect Characteristics and Boron-Cluster Ion-Implantation
a.656
Photoconductivity Techniques for the Defect Spectroscopy of Photovoltaics
a.657
HomeDefect and Diffusion ForumDefects and Diffusion in Ceramics VIObservability of Atomic Defects by Atomic Force...

Observability of Atomic Defects by Atomic Force Microscopy

Page: A653

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