Heterogeneous Void Swelling Near Grain Boundaries in Irradiated Materials
a.659
a.659
Semiconductors, with and without Defects, under Pressure
a.660
a.660
Hydrogen as a Shallow Center in Semiconductors and Oxides
a.661
a.661
Vacancies and Non-Equilibrium Grain-Boundary Segregation
a.662
a.662
Dislocation Mechanism of Nanotube Formation
a.663
a.663
Dislocation Structure of Boundaries in High-Temperature Superconductors
a.664
a.664
Dislocation Accumulation in ULSI Cells with STI Structure
a.665
a.665
Nano-Defects in Nanostructures
a.666
a.666
Dislocation Motion in Icosahedral Quasicrystals at High Temperatures
a.667
a.667
Dislocation Mechanism of Nanotube Formation
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