Paper Titles

Random Walk Model of the Mechanical Relaxation
p.157

Zinc Self-Diffusion in ZnO
p.163

Diffusion of Confined Polymer Chains
p.169

On Vacancy Concentrations in Dilute FCC Alloys
p.175

Which is Larger, a Self-Interstitial or a Vacancy Activation Energy of Diffusion in Silicon?
p.181

Software for Simulation of Oxidation Processes
p.189

Diffusion in Intermetallic Compounds Studied Using Nuclear Quadrupole Relaxation
p.195

A Diffusion-Effusion Database for the Optimization of Radioactive Beams
p.201

Approximate Solutions of Grain Boundary Diffusion in Thin Films in the B₂ Regime
p.206

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 237-240Which is Larger, a Self-Interstitial or a Vacancy...

Which is Larger, a Self-Interstitial or a Vacancy Activation Energy of Diffusion in Silicon?

Article Preview

Abstract:

You might also be interested in these eBooks

Diffusion in Materials - DIMAT2004

Info:

Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Pages:

181-188

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.237-240.181

Citation:

Cite this paper

Online since:

April 2005

Authors:

Takahisa Okino, Toshitada Shimozaki, C.G. Lee

Keywords:

Activation Energy, Diffusivity, Intrinsic Point Defects (IPD), Silicon Semiconductor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: