Atomic Diffusion Features in Au/Al & Al/Ni Bonding Interface

Article Preview

Abstract:

Vertical section features in bonding point were produced by ion-sputter thinning, and were tested by using TEM-F30. Lift-off characteristics at the interface of Ultrasonic bond are observed by using SEM (JSM-6360LV). Results show that thickness of Au/Al atomic diffusion interface was about 500 Nanometer under ultrasonic and thermal energy. Ultrasonic vibration activates dislocations at metal crystal lattice. Fracture morphology of lift-off interface was dimples. Tensile fracture appeared by pull-test not in bonded interface but in basis material, and bonded strength at interface was enhanced by diffused atom from the other side.

You might also be interested in these eBooks

Info:

Periodical:

Defect and Diffusion Forum (Volumes 247-248)

Pages:

29-0

Citation:

Online since:

December 2005

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] G.G. Harman. The Ultrasonic Welding Mechanism as Applied to Aluminum- and Gold-Wire Bonding in Microelectronics. IEEE Transactions on Packaging, 1997, 13.

DOI: 10.1109/tphp.1977.1135225

Google Scholar

[4] 406-15.

Google Scholar

[2] Li Jun-Hui, Han Lei, and Zhong Jue. Microstructure Characteristics at the Thermosonic Bond Interface. China Mechanical Engineering, 2005, 16.

Google Scholar

[4] 341-4.

Google Scholar

[3] Vern H., Winchell I., and Howard B., Enhancing Ultrasonic Bond Development. IEEE Transactions on Manufacturing Technology, 1998, 1.

Google Scholar

[3] 211-20.

Google Scholar

[4] Jiromaru Tsujino, Hiroyuki Yoshihara, Tsutomu Sano et al. High-Frequency Ultrasonic Wire Bonding Systems, Ultrasonics, 2000, 38.

DOI: 10.1016/s0041-624x(99)00173-0

Google Scholar

[3] 77-80.

Google Scholar

[5] Jiromaru Tsujino, Hiroyuki Yoshihara, Kazuyoshi Kamimoto, et al., Welding Characteristics and Temperature Rise of High-Frequency and Complex Vibration Ultrasonic Wire Bonding, Ultrasonics, 2002, 36.

DOI: 10.1016/s0041-624x(97)00075-9

Google Scholar

[2] 59-65.

Google Scholar

[6] Shivesh Suman, Yogendra Joshi, G.G. Harman et al., Wire Bond Temperature Sensor. National Institute of Standards and Technology, 2002, 1, 5-14.

Google Scholar

[7] M. Mayer, O. Paul, D. Bolliger et al., Integrated Temperature Microsensors for Characterization and Optimization of Thermosonic Ball Bonding Process, Proceedings of the 1999 Electronic Components and Technology (ECTC), San Diego, California, 1999, 463-8.

DOI: 10.1109/ectc.1999.776216

Google Scholar

[8] S.Y. Kang, P.M. Williams, Y.C. Lee, Modeling and Experimental Studies on Thermosonic Flip Chip Bonding, IEEE Trans. on Components, Packaging, and Manufacturing Technology, 1995, 18.

DOI: 10.1109/96.475282

Google Scholar

[4] 728-33.

Google Scholar

[9] Peter Elenius and Lee Levine, Comparing Flip-Chip and Wire-Bond Interconnection Technologies, IEEE Transactions on Packaging, 2000, 8, 81-7.

Google Scholar

[10] Qing Tan, Brian Schaible, Leonard J. et al., Thermosonic Flip Chip with a Self-Planarization Feature Using Polymer, IEEE Trans. on Components, Packaging, and Manufacturing Technology, 1998, 19.

DOI: 10.1109/ectc.1998.678915

Google Scholar

[5] 1-8.

Google Scholar