Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements

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Abstract:

The behaviour of quenched defects in Ni2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, an activation energy (EA=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of 3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel rich defects via the released vacancies.

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Periodical:

Defect and Diffusion Forum (Volumes 273-276)

Pages:

312-317

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Online since:

February 2008

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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