Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements
The behaviour of quenched defects in Ni2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, an activation energy (EA=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of 3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel rich defects via the released vacancies.
Andreas Öchsner and Graeme E. Murch
A. Jennane et al., "Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements ", Defect and Diffusion Forum, Vols. 273-276, pp. 312-317, 2008