Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements

Abstract:

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The behaviour of quenched defects in Ni2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, an activation energy (EA=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of 3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel rich defects via the released vacancies.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 273-276)

Edited by:

Andreas Öchsner and Graeme E. Murch

Pages:

312-317

DOI:

10.4028/www.scientific.net/DDF.273-276.312

Citation:

A. Jennane et al., "Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements ", Defect and Diffusion Forum, Vols. 273-276, pp. 312-317, 2008

Online since:

February 2008

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Price:

$35.00

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