Abstracts

GaN: Interface Defects
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GaN: Point Defects
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GaN: Point Defects
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Through the full potential linearized augmented plane wave method, the possibility of defect-induced magnetism in wurtzite GaN was explored. The N vacancy defect structure had no sign of a magnetic state. Nonetheless, very interestingly it was found
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GaN: Point Defects
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GaN: Point Defects
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GaN: Point Defects
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GaN: Point Defects
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GaN: Point Defects
a.160

HomeDefect and Diffusion ForumDefects and Diffusion in Ceramics XGaN: Point Defects

GaN: Point Defects

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