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Abstracts
Planar Channelled Positrons in Cubic Metals Containing Point Defects
a.106
Modelling Two-Dimensional Crystals and Nanotubes with Defects
a.107
Positron Trapping Model for Point Defects and Grain Boundaries
a.108
Modelling of Point Defects in Anisotropic Media
a.109
Dependence of Photoconductance Lifetime on Multiple Defect Occupation
a.110
Effect of Metal-Interstitial Interactions on Atom Distributions
a.111
Computational Method to Identify Interstitial Sites in Complex Materials
a.112
Tensile Strength of a Disclinated Bicrystalline Nanofilm
a.113
Wedge Disclination Dipole Interacting with an Annular Inclusion
a.114
HomeDefect and Diffusion ForumDefects and Diffusion, Theory and SimulationDependence of Photoconductance Lifetime on...

Dependence of Photoconductance Lifetime on Multiple Defect Occupation

Page: A110

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