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Abstracts
Crystal Structure of Defect-Containing Semiconductor Nanocrystals
a.341
Size-Dependent Yield Strength and Defect Evolution in Metal Nanowires
a.342
Stacking and Twin Faults in Close-Packed Crystal Structures
a.343
Energy Changes upon Stacking Fault Formation or Phase Transition
a.344
Twinning Partial Multiplication at Grain Boundary
a.345
Crack-Stimulated Generation of Deformation Twins
a.346
Deformation-Twin Dominant Crack Growth in FCC Metals
a.347
Formation of Single and Multiple Deformation Twins
a.348
Initiation and Evolution of Deformation Twinning
a.349
HomeDefect and Diffusion ForumDefects and Diffusion, Theory and SimulationTwinning Partial Multiplication at Grain Boundary

Twinning Partial Multiplication at Grain Boundary

Page: A345

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