Evolution of Interdiffused Gaussian-Shape Nanolayer in Au-Si(111) System at Ambient Condition

Abstract:

Evolution of interdiffused Gaussian-shape nanolayer of Au-Si, formed due to diffusion of Au into Si(111) substrate at ambient conditions, depends strongly on the Si surface pretreatment/passivation conditions. Negligible diffusion in the Au-OSi(111) sample, confirms the strong barrier action of the oxide-layer against diffusion, while large diffusion in the Au-HSi(111) sample compared to that in the Au-BrSi(111) sample suggests that the H-passivated Si(111) surface is more stable. This nature of the Au-Si(111) system is qualitatively similar to that of the Au-Si(001) system but it differs quantitatively. The size, electronegativity and bond-energy of the passivating elements and the number of dangling bonds on the Si surface influence the instability of the Si surface. This instability, parameterized by growth-time of oxide layer alone, can be utilized to tune the amount of diffusion into the sub-surface Si region. The distribution of growth-time and fractional passivated area, which are related to the improper Si surface passivation, are against such control and needs perfection.

• Periodical: Defect and Diffusion Forum (Volumes 297-301)
• Pages: 1133-1139
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.297-301.1133
• Online since: April 2010
• Authors: J.K. Bal, S. Hazra
• Keywords: Diffusion Formation, Gaussian-Shape Nanolayer, Interface Formation, Scanning Tunneling Microscopy, Surface Passivation, X-Ray Reflectometry

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