Evolution of Interdiffused Gaussian-Shape Nanolayer in Au-Si(111) System at Ambient Condition

Abstract:

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Evolution of interdiffused Gaussian-shape nanolayer of Au-Si, formed due to diffusion of Au into Si(111) substrate at ambient conditions, depends strongly on the Si surface pretreatment/passivation conditions. Negligible diffusion in the Au-OSi(111) sample, confirms the strong barrier action of the oxide-layer against diffusion, while large diffusion in the Au-HSi(111) sample compared to that in the Au-BrSi(111) sample suggests that the H-passivated Si(111) surface is more stable. This nature of the Au-Si(111) system is qualitatively similar to that of the Au-Si(001) system but it differs quantitatively. The size, electronegativity and bond-energy of the passivating elements and the number of dangling bonds on the Si surface influence the instability of the Si surface. This instability, parameterized by growth-time of oxide layer alone, can be utilized to tune the amount of diffusion into the sub-surface Si region. The distribution of growth-time and fractional passivated area, which are related to the improper Si surface passivation, are against such control and needs perfection.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 297-301)

Edited by:

Andreas Öchsner, Graeme E. Murch, Ali Shokuhfar and João M.P.Q. Delgado

Pages:

1133-1139

DOI:

10.4028/www.scientific.net/DDF.297-301.1133

Citation:

J.K. Bal and S. Hazra, "Evolution of Interdiffused Gaussian-Shape Nanolayer in Au-Si(111) System at Ambient Condition", Defect and Diffusion Forum, Vols. 297-301, pp. 1133-1139, 2010

Online since:

April 2010

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$35.00

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