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An Overview of the Diffusion Studies in the V-Si System
Abstract:
The diffusion study in the V-Si system is reviewed. We show that the indirect method used previously to determine the diffusion parameters draws unnecessary error. Rather the method developed by Wagner should be used to calculate the diffusion parameters directly from the composition profile.
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731-736
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Online since:
April 2011
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© 2011 Trans Tech Publications Ltd. All Rights Reserved
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