An Overview of the Diffusion Studies in the V-Si System

Abstract:

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The diffusion study in the V-Si system is reviewed. We show that the indirect method used previously to determine the diffusion parameters draws unnecessary error. Rather the method developed by Wagner should be used to calculate the diffusion parameters directly from the composition profile.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 312-315)

Edited by:

Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado

Pages:

731-736

DOI:

10.4028/www.scientific.net/DDF.312-315.731

Citation:

S. Prasad and A. Paul, "An Overview of the Diffusion Studies in the V-Si System", Defect and Diffusion Forum, Vols. 312-315, pp. 731-736, 2011

Online since:

April 2011

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Price:

$35.00

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