Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon
In this work, we report the fabrication of porous silicon multilayers using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω-cm) by pulsed anodic etching. The optical properties have been found to be strongly dependent on the duty-cycle and frequency of the applied current. Less than 50 % of duty-cycle, at low frequencies, is found to show very rough porous silicon – crystalline silicon (PS-cSi) interface. Use of duty cycle above 50 %, in a certain range of frequencies, is found to make the interface smooth. The optical properties of the photonic devices are investigated for 50 % and 75 % of duty-cycle, for different frequencies in the range of 0-1000 Hz, using the current densities of 10, 90 and 150 mA/cm2. The possibility of fabricating rugate filter with this resistivity is also explored.
O. Sarracino Martínez et al., "Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon", Journal of Nano Research, Vol. 4, pp. 11-17, 2008