Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon

O. Sarracino Martínez; J. Escorcia-Garcia; J.M. Gracia-Jiménez; V. Agarwal

doi:10.4028/www.scientific.net/JNanoR.4.11

Paper Titles

INVITED PAPER: Instrumentation and Biological Applications of High-Resolution Frequency Modulation Atomic Force Microscopy in Liquid
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Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon
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Self-Assembled ZnO Nanostructure for Field-Emission Devices
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Growth and Luminescence of Nanowires and Oriented Nanoplate Arrays of Mg Doped ZnO
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Study of the Silanization Process in CNFs: Time, Temperature, Silane Type and Concentration Influence
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Technology of Fabrication and Morphology of Multiwalled Carbon Nanotubes on Co-Ni/MgO Catalysts by Thermal CVD
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Stability of Thin Gold Nano Wires
p.65

Solution Processing Route to High Efficiency CuIn(S,Se)₂ Solar Cells
p.79

Synthesis and Characterization of Tin Oxide Nanoparticle for Humidity Sensor Applications
p.91

HomeJournal of Nano ResearchJournal of Nano Research Vol. 4Photoluminescent Photonic Devices from...

Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon

Abstract:

In this work, we report the fabrication of porous silicon multilayers using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω-cm) by pulsed anodic etching. The optical properties have been found to be strongly dependent on the duty-cycle and frequency of the applied current. Less than 50 % of duty-cycle, at low frequencies, is found to show very rough porous silicon – crystalline silicon (PS-cSi) interface. Use of duty cycle above 50 %, in a certain range of frequencies, is found to make the interface smooth. The optical properties of the photonic devices are investigated for 50 % and 75 % of duty-cycle, for different frequencies in the range of 0-1000 Hz, using the current densities of 10, 90 and 150 mA/cm2. The possibility of fabricating rugate filter with this resistivity is also explored.