Influence of Silicon Surface Preparation and Orientation on Diamond Nucleation and Growth in CH4/H2 System Discharge

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Periodical:

Key Engineering Materials (Volumes 132-136)

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Edited by:

P. Abelard, J. Baxter, D. Bortzmeyer et al.

Pages:

1536-1539

DOI:

10.4028/www.scientific.net/KEM.132-136.1536

Citation:

M. Belmahi et al., "Influence of Silicon Surface Preparation and Orientation on Diamond Nucleation and Growth in CH4/H2 System Discharge", Key Engineering Materials, Vols. 132-136, pp. 1536-1539, 1997

Online since:

April 1997

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$35.00

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