Stacking Fault and Growth Direction of β-SiC Whisker Synthesized by Carbonthermal Reduction

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Periodical:

Key Engineering Materials (Volumes 159-160)

Edited by:

Hiroshige Suzuki, Katsutoshi Komeya and Keizo Uematsu

Pages:

95-100

DOI:

10.4028/www.scientific.net/KEM.159-160.95

Citation:

K. Koumoto and W. S. Seo, "Stacking Fault and Growth Direction of β-SiC Whisker Synthesized by Carbonthermal Reduction", Key Engineering Materials, Vols. 159-160, pp. 95-100, 1999

Online since:

May 1998

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$35.00

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