Paper Titles

Domain Switching Properties in PZN-PT Single Crystals with Engineered Domain Configurations
p.9

Low-Temperature Firing and Thick-Film Preparation in Lead Zirconate Titanate Ceramics
p.15

Surface Microstructure of PbO-Rich PbNi_1/3Nb_2/3O₃-PbZrO₃ Ceramics
p.21

Electrical Properties of Sr_xBi_4-xTi_3-xTa_xO₁₂ (0≦x≦1) Lead-Free Piezoelectric Ceramics
p.25

Effects of Ta, Nb and V Substitution at Ti Site on Ferroelectric Properties in BaBi₄Ti₄O₁₅ Single Crystals
p.31

Microwave Dielectric Properties of Ba₄(Sm_1-yBi_y)_9+1/3Ti₁₈O₅₄ Solid Solution
p.37

Low Temperature Synthesis of BaTiO₃ Ceramics by Sol-Gel Process and its Electro-Optic Properties
p.43

Recent Progress of Low Firing High Performance Piezoelectric Ceramics
p.49

Effects of Electrodes on the Electrical Properties of Ferroelectric Devices
p.55

HomeKey Engineering MaterialsKey Engineering Materials Vols. 214-215Effects of Ta, Nb and V Substitution at Ti Site on...

Effects of Ta, Nb and V Substitution at Ti Site on Ferroelectric Properties in BaBi₄Ti₄O₁₅ Single Crystals

Article Preview

Abstract:

You might also be interested in these eBooks

Asian Ceramic Science for Electronics I

Info:

Periodical:

Key Engineering Materials (Volumes 214-215)

Pages:

31-36

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.214-215.31

Citation:

Cite this paper

Online since:

July 2001

Authors:

Hiroshi Irie, Masaru Miyayama, Tetsuichi Kudo

Keywords:

Coercive Field, Curie Temperature, Hysteresis Loop, Remanent Polarization, Single Crystal, Substitution

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: