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HomeKey Engineering MaterialsKey Engineering Materials Vol. 216Conduction Mechanism of La-, Nb-Doped BaTiO3 Thin...

Conduction Mechanism of La-, Nb-Doped BaTiO₃ Thin Films by Doping MOCVD

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Electroceramics in Japan IV

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Periodical:

Key Engineering Materials (Volume 216)

Pages:

87-92

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.216.87

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Online since:

September 2001

Authors:

Daisuke Nagano, Mitsunori Sugiura, Naoki Wakiya, Hiroshi Funakubo, Kazuo Shinozaki, Nobuyasu Mizutani

Keywords:

Barium Titanate (BT), Doping MOCVD, Semiconductor, Thin Film

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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