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HomeKey Engineering MaterialsKey Engineering Materials Vols. 221-222Triple Junctions in Polycrystalline Silicon: A...

Triple Junctions in Polycrystalline Silicon: A Numerical Study Based upon Atomistic Simulations

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Experimental Techniques and Design in Composite Materials 5

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Periodical:

Key Engineering Materials (Volumes 221-222)

Pages:

307-314

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.221-222.307

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Online since:

December 2001

Authors:

Luciano Colombo, Fabrizio Cleri

Keywords:

Atomistic Simulation, Grain Boundary, Silicon, Triple Junctions

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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