Calculations of R(T) and I(V) Characteristics of the n-Doped BaTiO3 Ceramics with PTCR Properties

L. Mitoseriu; Massimo Viviani; M.T. Buscaglia; V. Buscaglia; A. Testino; Paolo Nanni

doi:10.4028/www.scientific.net/KEM.264-268.1253

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Antimony Doped Bi₂O₃ Thin Films
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Ba_1-xSr_xTiO₃ Films Prepared by Chemical Solution Deposition
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Calculations of R(T) and I(V) Characteristics of the n-Doped BaTiO₃ Ceramics with PTCR Properties
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Ceria-Based Electrolytes for Intermediate Temperature SOFCs - Electric and Dielectric Properties
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Characterization of the Substituted Lanthanum Manganites
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Calculations of R(T) and I(V) Characteristics of the n-Doped BaTiO₃ Ceramics with PTCR Properties

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Key Engineering Materials (Volumes 264-268)

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1253-1256

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.264-268.1253

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Online since:

May 2004

Authors:

L. Mitoseriu, Massimo Viviani, M.T. Buscaglia, V. Buscaglia, A. Testino, Paolo Nanni

Keywords:

BaTiO₃ Ceramic, PTCR, Semiconductor-Ferroelectric Materials

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