Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing
ANSYS software was used to simulate the superposition rule of multi-thermal-source temperature field. The SiC productions synthesized by multi-thermal-source furnace were examined through X-ray diffractometer (XRD) and energy depressive spectroscopy (EDS). The crystalline and density were determined by scanning electron microscopy (SEM). The superposition rule and influence of multithermal- source temperature field on SiC synthesizing were clarified.
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
X. G. Wang et al., "Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing", Key Engineering Materials, Vols. 280-283, pp. 1283-1286, 2005