Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing

Abstract:

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ANSYS software was used to simulate the superposition rule of multi-thermal-source temperature field. The SiC productions synthesized by multi-thermal-source furnace were examined through X-ray diffractometer (XRD) and energy depressive spectroscopy (EDS). The crystalline and density were determined by scanning electron microscopy (SEM). The superposition rule and influence of multithermal- source temperature field on SiC synthesizing were clarified.

Info:

Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

1283-1286

DOI:

10.4028/www.scientific.net/KEM.280-283.1283

Citation:

X. G. Wang et al., "Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing", Key Engineering Materials, Vols. 280-283, pp. 1283-1286, 2005

Online since:

February 2007

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Price:

$35.00

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