Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing

Xiao Gang Wang; Bin Yang; Shuiyuan Shao

doi:10.4028/www.scientific.net/KEM.280-283.1283

Paper Titles

Polycarbosilane Conversion Bonded Porous SiC Ceramics
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Microstructure and Properties of Reaction-Formed Silicon Carbide
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Spheroid Growth during Sintering of Copper Coated Silicon Carbide Particles in the Fabrication of Nanocomposite
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On the Theoretical Model for Radar Absorbing Property of SiC
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Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing
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Preparation of Oriented Porous Silicon Carbide Bodies by Freeze-Casting Process
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Gelcasting of Aqueous Silicon Carbide / Carbon Black Slurry
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Formation Mechanism of Interior Microflaws in the Preparation of Polymer-Derived Silicon Carbide Fibers
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Fabrication and Characterization of Porous Mullite Coating on Porous Silicon Carbide Support
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283Investigation on Superposition Rule and Influence...

Investigation on Superposition Rule and Influence of Multi-Thermal-Source Temperature Field on SiC Synthesizing

Abstract:

ANSYS software was used to simulate the superposition rule of multi-thermal-source temperature field. The SiC productions synthesized by multi-thermal-source furnace were examined through X-ray diffractometer (XRD) and energy depressive spectroscopy (EDS). The crystalline and density were determined by scanning electron microscopy (SEM). The superposition rule and influence of multithermal- source temperature field on SiC synthesizing were clarified.

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Periodical:

Key Engineering Materials (Volumes 280-283)

Pages:

1283-1286

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.280-283.1283

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Online since:

February 2007

Authors:

Xiao Gang Wang, Bin Yang, Shuiyuan Shao

Keywords:

Multi-Thermal-Source, Temperature Field Superposition, Thermal Energy Shield

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