Preparation and Characterization of Ordered Macroporous ZnO Films for Photonic Application
Wide band-gap semiconductor ZnO film with ordered face-centered cubic (FCC) structure air holes was prepared by electrochemical process. The porous ZnO film was prepared in zinc nitrate aqueous solution, using the indium tin oxide (ITO) substrate covered with synthetic opals as cathode by potentiostatic method. In order to improve the filling ratio of ZnO in the opal interstices, various potentials were applied to control the deposition speeds. The porous ZnO film was characterized by X-ray diffraction and Scanning Electron Microscope and a photonic band gap at about 568nm was observed by micro-region reflection spectrometer in ZnO inverse opals.
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
M. Fu et al., "Preparation and Characterization of Ordered Macroporous ZnO Films for Photonic Application", Key Engineering Materials, Vols. 280-283, pp. 569-572, 2005