Development of BaTiO3 Based X7R Wafers for Single-Layer Capacitors

Zhengbo Yu; Vladimir D. Krstić; Jack Ng

doi:10.4028/www.scientific.net/KEM.280-283.69

Paper Titles

Sintering and Dielectric Properties of Nano-BaTiO₃ Powder Synthesized by High-Gravity Reactive Precipitation
p.53

Modification of Ba_6-3xSm_8+2xTi₁₈O₅₄ (x=2/3)Microwave Dielectric Ceramics by Nd/Bi Co-Substitution on A-Site
p.57

Two Methods for the Measurement of Complex Permittivity of Microwave Dielectric Ceramics
p.61

Properties of Sr-Doped BaTiO₃ Based X7R Ceramic Materials
p.65

Development of BaTiO₃ Based X7R Wafers for Single-Layer Capacitors
p.69

Effects of Rare-Earth Oxides on Dielectric Properties of X7R Ceramics for Base Metal Internal Electrode Capacitors
p.73

Effect of Bi Content on the Dielectric Property of SBN Ceramics Prepared by Spark Plasma Sintering
p.77

Influence of ZrO₂ on Dielectric Properties of Ba_1-xSr_xTiO₃ Ceramics
p.79

Dielectric and Ferroelectric Properties of Ba_1-xSr_xTiO₃ Thin Films Prepared by Pulsed Laser Deposition
p.81

HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283Development of BaTiO3 Based X7R Wafers for...

Development of BaTiO₃ Based X7R Wafers for Single-Layer Capacitors

Abstract:

Research on the development and characterization of X7R BaTiO3 dielectric wafers for high frequency single-layer capacitors has been carried out. Commercial BaTiO3 powders were processed and optimized in dielectric constant (er), dissipation factor (DF) and temperature coefficient of capacitance (TCC). The results indicate a strong effect of sintering temperature on dielectric properties as well as on mechanical properties of the BaTiO3. It has been shown that the highest dielectric constant is achieved at high sintering temperatures (>1400°C) and lowest TCC at lower sintering temperatures (<1300°C). By optimizing fabrication process e.g. dry pressing, cold isostatic pressing, sintering, and machining such as grinding and lapping, BaTiO3 wafers of dielectric constant from 3400 to 3600, with a diameter approximately 50mm and thickness 150µm, have been manufactured successfully. The fabricated thin wafers exhibit the X7R capacitor characteristics of the dissipation factor (<3%) and temperature coefficient of capacitance (<±15%) in the temperature range of –55°C to 125°C.