Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO3 Wafer

Abstract:

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Lithium tantalite (LiTaO3) possesses a combination of unique electro-optical, acoustic, piezoelectric, pyroelectric and non-linear optical properties, making it a suitable material for applications in high frequency, broad width-band SAW and BAW components, filters in television receivers, etc. The surface quality of LiTaO3 wafers decides the performances of the devices. In this paper, the technique of chemical mechanical polishing (CMP) was used to polish LiTaO3 wafers. The influences of the polishing parameters on the CMP processes of LiTaO3 wafers were analyzed in detail based on the measurement of the material removal rate, surface roughness and topograph of the polished wafers in different polishing conditions.

Info:

Periodical:

Key Engineering Materials (Volumes 315-316)

Edited by:

Zhejun Yuan, Xipeng Xu, Dunwen Zuo, Julong Yuan and Yingxue Yao

Pages:

561-565

DOI:

10.4028/www.scientific.net/KEM.315-316.561

Citation:

H. Yuan et al., "Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO3 Wafer ", Key Engineering Materials, Vols. 315-316, pp. 561-565, 2006

Online since:

July 2006

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Price:

$35.00

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