Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO3 Wafer

Hui Yuan; Xin Wei; H.W. Du; W. Hu; Wei Xiong

doi:10.4028/www.scientific.net/KEM.315-316.561

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Study of Inhibition to Leaching of Cobalt from Cemented Carbide Tools
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A Two-Dimensional Fast Tool Servo Used for Real Time Error Compensation in Taper Turning
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Development of a New Virtual Environment System for Assembly
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Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO₃ Wafer
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The Control System Construction of the Multifunctional Combined CNC Machine
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Research on Endless Wire Saw Cutting of Al₂O₃/TiC Ceramics
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Nano-SiC Particles Reinforced Plasma Sprayed WC-Co Coating by Laser Melting Process
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Study on the Complex Tools Coating Technology by EDM
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Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO₃ Wafer

Abstract:

Lithium tantalite (LiTaO3) possesses a combination of unique electro-optical, acoustic, piezoelectric, pyroelectric and non-linear optical properties, making it a suitable material for applications in high frequency, broad width-band SAW and BAW components, filters in television receivers, etc. The surface quality of LiTaO3 wafers decides the performances of the devices. In this paper, the technique of chemical mechanical polishing (CMP) was used to polish LiTaO3 wafers. The influences of the polishing parameters on the CMP processes of LiTaO3 wafers were analyzed in detail based on the measurement of the material removal rate, surface roughness and topograph of the polished wafers in different polishing conditions.