Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films

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Pure and Cu2+-doped LaFeO3 thin films were prepared on Al2O3 substrate by polymer complex method using La(NO3)3⋅6H2O, FeCl3⋅6H2O and Cu(NO3)2⋅3H2O as raw materials, citric acid (CA) as chelating agent and ethylene glycol (EG) as cross-linking agent. As-growth thin films were well-crystallized and the grain size was about 40nm after being annealed at 650°C. The sensitivities of pure and Cu2+- doped LaFeO3 thin films to 80 ppm acetone gas measured at 350°C were 315 and 30, respectively. Partial substitution of Fe3+ in LaFeO3 with Cu2+ could widen testing temperature of the materials.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

684-687

DOI:

10.4028/www.scientific.net/KEM.336-338.684

Citation:

Z. Zhang et al., "Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films", Key Engineering Materials, Vols. 336-338, pp. 684-687, 2007

Online since:

April 2007

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$35.00

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