Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films
Pure and Cu2+-doped LaFeO3 thin films were prepared on Al2O3 substrate by polymer complex method using La(NO3)3⋅6H2O, FeCl3⋅6H2O and Cu(NO3)2⋅3H2O as raw materials, citric acid (CA) as chelating agent and ethylene glycol (EG) as cross-linking agent. As-growth thin films were well-crystallized and the grain size was about 40nm after being annealed at 650°C. The sensitivities of pure and Cu2+- doped LaFeO3 thin films to 80 ppm acetone gas measured at 350°C were 315 and 30, respectively. Partial substitution of Fe3+ in LaFeO3 with Cu2+ could widen testing temperature of the materials.
Wei Pan and Jianghong Gong
Z. Zhang, H. M. Ji, Y. F. Gu, X. D. Chen, D. Y. Yu, "Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films", Key Engineering Materials, Vols. 336-338, pp. 684-687, 2007