Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films

Zhou Zhang; Hui Ming Ji; Yan Fei Gu; Xiao Dong Chen; Dao Yin Yu

doi:10.4028/www.scientific.net/KEM.336-338.684

Paper Titles

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Relations between the Morphology of ZnO Powders and the Electrical Performance of ZnO Varistors
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Equivalent Model of Modified Bismuth Oxides Described by Fractional Derivatives
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Microstructure and Electrical Properties of ZnO-Pr₆O₁₁-Dy₂O₃-Based Varistor Ceramics Doped with La₂O₃
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Preparation and Acetone Sensitive Characteristics of Pure and Cu²⁺-Doped LaFeO₃ Semiconductor Thin Films
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Synthesis of La-Mn Substituted M-Type Ba Hexaferrites by Sol-Gel Method
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Ferromagnetic Properties of Ni_0.2Cu_0.2Zn_0.6Fe₂O₄-PZT Composites
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A New Low-Temperature Sintering Method for NiCuZn Ferrite
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An Investigation on the Optimum Conditions for Preparation of Pure Mn-Mg-Zn Ferrite Powder
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Preparation and Acetone Sensitive Characteristics of Pure and Cu²⁺-Doped LaFeO₃ Semiconductor Thin Films

Abstract:

Pure and Cu2+-doped LaFeO3 thin films were prepared on Al2O3 substrate by polymer complex method using La(NO3)3⋅6H2O, FeCl3⋅6H2O and Cu(NO3)2⋅3H2O as raw materials, citric acid (CA) as chelating agent and ethylene glycol (EG) as cross-linking agent. As-growth thin films were well-crystallized and the grain size was about 40nm after being annealed at 650°C. The sensitivities of pure and Cu2+- doped LaFeO3 thin films to 80 ppm acetone gas measured at 350°C were 315 and 30, respectively. Partial substitution of Fe3+ in LaFeO3 with Cu2+ could widen testing temperature of the materials.