Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films
Pure and Cu2+-doped LaFeO3 thin films were prepared on Al2O3 substrate by polymer complex method using La(NO3)3⋅6H2O, FeCl3⋅6H2O and Cu(NO3)2⋅3H2O as raw materials, citric acid (CA) as chelating agent and ethylene glycol (EG) as cross-linking agent. As-growth thin films were well-crystallized and the grain size was about 40nm after being annealed at 650°C. The sensitivities of pure and Cu2+- doped LaFeO3 thin films to 80 ppm acetone gas measured at 350°C were 315 and 30, respectively. Partial substitution of Fe3+ in LaFeO3 with Cu2+ could widen testing temperature of the materials.
Wei Pan and Jianghong Gong
Z. Zhang et al., "Preparation and Acetone Sensitive Characteristics of Pure and Cu2+-Doped LaFeO3 Semiconductor Thin Films", Key Engineering Materials, Vols. 336-338, pp. 684-687, 2007