Electrical Properties of Pt/Nb-Doped SrTiO3 Schottky Junctions

Jian Yong Li; Takeshi Ohgaki; Ryota Matsuoka; Hideyo Okushi; Naoki Ohashi

doi:10.4028/www.scientific.net/KEM.421-422.463

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Electrical Properties of Pt/Nb-Doped SrTiO₃ Schottky Junctions

Abstract:

In this study, we successfully fabricated the Schottky junctions consisting of Pt electrode and high concentration Nb-doped (0.5 wt%) SrTiO3 (001) single crystal by sputtering process. The carrier concentrations of Nb-0.5wt%-doped SrTiO3 were determined as 1020 /cm3 order by Hall effect measurement. The electrical properties of junctions were investigated by measuring their current-voltage (I-V), capacitance-voltage (C-V) characteristics at temperature range from 80K to 400K. The hysteresis feature was observed that indicating the alteration of barrier height in junctions especially at lower temperature. The donor concentration and built-in potentials calculated from C-2-V data showed large discrepancy from Hall effect measurement indicating that the junctions deviate from the ideal Schottky diode model.