Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

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Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

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Edited by:

Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki

Pages:

133-136

DOI:

10.4028/www.scientific.net/KEM.485.133

Citation:

R. Saotome et al., "Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films", Key Engineering Materials, Vol. 485, pp. 133-136, 2011

Online since:

July 2011

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$35.00

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