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Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure

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Abstract:

High-performance single crystals of ferroelectric Bi4Ti3O12 (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po2) atmosphere. Crystals grown at 960°C at a Po2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 mC/cm2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d11* of 37 pm/V for BiT.

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Periodical:

Key Engineering Materials (Volume 485)

Pages:

73-76

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.485.73

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Online since:

July 2011

Authors:

Yuuki Kitanaka, Yuji Noguchi, Masaru Miyayama

Keywords:

Bismuth Layer-Structured Ferroelectrics, Crystal Growth, Lattice Defects, Polarisation

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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