Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure

Abstract:

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High-performance single crystals of ferroelectric Bi4Ti3O12 (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po2) atmosphere. Crystals grown at 960°C at a Po2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 mC/cm2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d11* of 37 pm/V for BiT.

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Edited by:

Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki

Pages:

73-76

DOI:

10.4028/www.scientific.net/KEM.485.73

Citation:

Y. Kitanaka et al., "Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure", Key Engineering Materials, Vol. 485, pp. 73-76, 2011

Online since:

July 2011

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$35.00

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